0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC3052 features collector current :i c =0.2a power dissipation :p c =0.15w absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v collector current i c 200 ma power dissipation * p c 150 mw junction temperature t j 150 storage temperature t stg -55 to +150 * . 0.7 mmx16 cm 2 ceramic substrate h fe classification marking le lf lg rank e f g hfe 150 to 300 250 to 500 400 to 800 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c = 100 a,i e =0 50 v collector-emitter breakdown voltage v ceo i c =100 a,i b =0 50 v emitter-base breakdown voltage v ebo i e =100 a,i c =0 6v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =6v,i c =0 0.1 a v ce =6v,i c =1ma 150 800 v ce =6v,i c =0.1ma 50 collector-emitter saturation voltage v ce(sat) i c =100ma,i b = 10ma 0.3 v base-emitter saturation voltage v be(sat) i c = 100ma,i b = 10ma 1 v collector output capacitance c ob v ce =6v, i e =0, f=1mhz 4 pf noise figure nf v ce =6v,i e =-0.1ma, f=1khz, r g =2k 15 db transition frequency f t v ce =6v,i c = 10ma 180 mhz h fe dc current gain sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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